Silikon–germanium

SiGe (/ˈsɪɡiː/ atau /ˈsaɪdʒiː/), atau silikon–germanium, merupakan paduan dengan rasio molar silikon dan germanium berapa pun, yaitu dengan rumus molekul berbentuk Si_1−xGe_x. Ini biasanya digunakan sebagai bahan semikonduktor dalam sirkuit terpadu (IC) untuk transistor bipolar heterojungsi atau sebagai lapisan penginduksi regangan untuk transistor CMOS. IBM memperkenalkan teknologi ini ke dalam manufaktur arus utama pada tahun 1989. Teknologi yang relatif baru ini menawarkan peluang dalam desain dan manufaktur sirkuit sinyal campuran dan sirkuit analog. SiGe juga digunakan sebagai bahan termoelektrik untuk aplikasi suhu tinggi (>700 K).^[1]^[2]^[3]^[4]^[5]

Lihat pula

Referensi

^ Ouellette, Jennifer (June/July 2002). "Silicon–Germanium Gives Semiconductors the Edge". Diarsipkan 2008-05-17 di Wayback Machine., The Industrial Physicist.
^ Meyerson, Bernard S. (March 1994). "High-Speed Silicon-Germanium Electronics". Scientific American. 270 (3): 62–67. Bibcode:1994SciAm.270c..62M. doi:10.1038/scientificamerican0394-62.
^ Woelk, Egbert; Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Amamchyan, Artashes; Power, Michael B.; Lamare, Bruno; Beaudoin, Grégoire; Sagnes, Isabelle (January 2006). "Designing novel organogermanium OMVPE precursors for high-purity germanium films". Journal of Crystal Growth. 287 (2): 684–687. Bibcode:2006JCrGr.287..684W. doi:10.1016/j.jcrysgro.2005.10.094.
^ Shenai, Deo V.; DiCarlo, Ronald L.; Power, Michael B.; Amamchyan, Artashes; Goyette, Randall J.; Woelk, Egbert (January 2007). "Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.
^ Markoff, John (9 July 2015). "IBM Discloses Working Version of a Much Higher-Capacity Chip". The New York Times.

[1] Ouellette, Jennifer (June/July 2002). "Silicon–Germanium Gives Semiconductors the Edge". Diarsipkan 2008-05-17 di Wayback Machine., The Industrial Physicist.

[2] Meyerson, Bernard S. (March 1994). "High-Speed Silicon-Germanium Electronics". Scientific American. 270 (3): 62–67. Bibcode:1994SciAm.270c..62M. doi:10.1038/scientificamerican0394-62.

[3] Woelk, Egbert; Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Amamchyan, Artashes; Power, Michael B.; Lamare, Bruno; Beaudoin, Grégoire; Sagnes, Isabelle (January 2006). "Designing novel organogermanium OMVPE precursors for high-purity germanium films". Journal of Crystal Growth. 287 (2): 684–687. Bibcode:2006JCrGr.287..684W. doi:10.1016/j.jcrysgro.2005.10.094.

[4] Shenai, Deo V.; DiCarlo, Ronald L.; Power, Michael B.; Amamchyan, Artashes; Goyette, Randall J.; Woelk, Egbert (January 2007). "Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.

[5] Markoff, John (9 July 2015). "IBM Discloses Working Version of a Much Higher-Capacity Chip". The New York Times.

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